creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test with prefix "h" on packing code meet jesd 201 class 2 whisker test symbol unit v rrm v v rms v v dc v i f(av) a i rrm a dv/dt v/ s r jc o c/w t j o c t stg o c document number: d1308014 version: f13 mbrf10l100ct dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec ito-220ab taiwan semiconductor mechanical data case: ito-220ab polarity: as marked maximum repetitive peak reverse voltage mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) 0.76 0.59 0.65 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm peak repetitive reverse surge current (note 1) typ 120 a maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 10 peak repetitive forward current (rated vr, square wave, 20khz) i frm 10 0.66 0.71 ma v 0.82 0.85 0.5 a voltage rate of change (rated v r ) 10000 typ max 0.3 maximum instantaneous forward voltage (note 2) i f = 5 a, t j =25 i f = 5 a, t j =125 i f = 10 a, t j =25 i f = 10 a, t j =125 v f max 0.73 15 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle mbrf10l100ct 100 70 100 1 20 maximum reverse current @ rated vr t j =25 t j =125 i r storage temperature range - 55 to +150 5.5 typical thermal resistance operating junction temperature range - 55 to +150
part no. mbrf10l100ct part no. mbrf10l100ct mbrf10l100ct mbrf10l100ct (ta=25 unless otherwise noted) document number: d1308014 version: f13 mbrf10l100ct taiwan semiconductor packing prefix "h" suffix "g" ratings and characteristics curves ordering information aec-q101 qualified packing code green compound code package example preferred p/n aec-q101 qualified packing code green compound code description c0 mbrf10l100ct c0g c0 g green compound MBRF10L100CTHC0 h c0 aec-q101 qualified c0 ito-220ab 50 / tube mbrf10l100ct c0 0 5 10 15 0 25 50 75 100 125 150 175 average forward current (a) case temperature ( ) fig.1 maximum forward current derating curve resister or inductive load with heatsink 0 25 50 75 100 125 150 1 10 100 peak forward surge current(a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 1000 10000 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current ( a) percent of vr (%) fig. 4 typical reverse characteristics tj=25 tj=125 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics tj=125 tj=25
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: d1308014 version: f13 marking diagram mbrf10l100ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance( / w) t-pulse duration(s) fig. 6 typical transient thermal impedance 10 100 1000 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p
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